apex microtechnology corporation telephone (520) 690-8600 fax (520) 888-3329 orders (520) 690-8601 email prodlit@apexmicrotech.com 1 compatible with pwm frequencies up to 30khz 50v to 500 v motor supply 20a continuous output current hcmos compatible schmitt trigger logic inputs separate emitter outputs for negative rail current sense sleep mode wide range for gate drive and logic supplies applications high power circuits for digital control of: three axis motion using brush type motors three phase brushless dc motor drive three phase ac motor drive three phase step motor drive description the EB01 consists of three independent igbt half bridges with drivers. the drivers may be interfaced with cmos or hcmos level logic. http://www.apexmicrotech.com (800) 546-apex (800) 546-2739 microtechnology triple independent logic interfaced half bridges ebo1 features figure 1. block diagram 14 13 hv1 out1 e1 15 22 21 hv3 out3 e3 23 18 17 hv2 out2 e2 19 16 hvrtn1 20 hvrtn2 24 hvrtn3 igbt half bridge output igbt half bridge output igbt half bridge output half bridge driver half bridge driver half bridge driver 12 11 1 2 3 4 5 6 8 9 10 hin 1 sd lin 1 hin 2 lin2 hin3 lin3 v cc 1 v cc 2 v cc 3 v dd ,logic supply v ss ,logic ground 7 24-pin dip pa ckage style ck
apex microtechnology corporation 5980 north shannon road tucson, arizona 85741 usa applications hotline: 1 (800) 546-2739 2 absolute maximum ratings specifications absolute maximum ratings high voltage supply, hv 5 500v output current, peak 1 28a output current, continuous 20a driver supply voltage, vcc 20v logic supply voltage, vdd 20v logic input voltage -0.3v to v dd + 0.3v power dissipation, internal 2 179 watts thermal resistance to case 3 2.1c/watt temperature, pin solder, 10s 300c temperature, junction 4 150c temperature range, storage ?65 to +150c operating temperature, case ?25 to +85c EB01 specifications p arameter test conditions min typ max units positive output voltage i out =20a; v cc =10.8v, v dd =5v; 497.3 502.7 volts hv=500v, fpwm=30khz, l=100 h negative output voltage " -2.7 2.7 v olts positive edge delay " 1000 n-second risetime " 500 n-second negative edge delay " 1000 n-second f alltime " 500 n-second pwm frequency set by external circuitry 30 khz input impedance set by internal resistors 50 k-ohm input a logic level input independently controls each igbt in the half bridge. a logic level high turns on the igbt; a logic level low turns it off. a common shutdown input turns off all igbts when high. all inputs are schmitt triggers with the upper threshold at 2/3v dd and the lower threshold at 1/3 v dd . this comfortably interfaces with cmos or hcmos provided that the v dd for the logic family and the EB01 are the same. ttl families may be used if a pull-up to the logic supply is added to the ttl gates driving the ebo1, and v dd for the EB01 is the same supply as the logic supply for the ttl family. an open signal connector pulls the shut down input high and all other inputs low, insuring that all outputs are off. however, input impedance is 50k on all inputs; therefore, if one input is open circuited a high radiated noise level could supuriousy turn on an igbt. output each output section consists of a switching mode igbt half bridge. separate hv supply, emitter, and hv return lines are provided for each section. the igbts are conservatively rated to carry 20a. at 20a the saturation voltage is 2.7v maximum. each igbt has a high-speed diode connected in anti- parallel. when switching an inductive load this diode will conduct, and the drop at 20a will be 2.7v maximum. input and output signals notes: 1. guaranteed but not tested. 2. total package power dissipation at 25c case tempterature with three outputs active. 3. each igbt. 4. long term operation at the maximum junction temperature will result in reduced product life. lower intern al temperature by reducing internal dissipation or using better heatsinking to achieve high mttf. 5. derate the high voltage supply v s by -0.133% per c below 25c. pin symbol function pin symbol function 1 v cc 3 gate supply 3 13 hv1 high voltage supply 1 2 lin3 low drive logic in 3 14 out1 section 1 output 3 hin3 high drive logic in 3 15 e1 section 1 emitter 4 v dd logic supply 16 hvrtn1 section 1 return 5 v cc 2 gate supply 2 17 hv2 high voltage supply 2 6 lin2 low drive logic in 2 18 out 2 section 2 output 7 v ss logic ground 19 e2 section 2 emitter 8 hin2 high drive logic in 2 20 hvrtn2 section 2 return 9 v cc 1 gate supply 1 21 hv3 high voltage supply 3 10 lin1 low drive logic in 1 22 out 3 section 3 output 11 sd shut down logic in 23 e3 section 3 emitter 12 hin1 high drive logic in 1 24 hvrtn 3 section 3 return
apex microtechnology corporation telephone (520) 690-8600 fax (520) 888-3329 orders (520) 690-8601 email prodlit@apexmicrotech.com 3 EB01 typical performance graphs 25 50 75 100 125 14 16 18 20 continuous amps 12 case temperature, ( c) continuous amps, (a) 10 075 100 case temperature, ( c) 25 power derating 25 50 125 35 45 55 65 75 internal power dissipation, (w) each active output transistor 85 58w 31w -50 0 50 100 150 0.9 1.0 1.1 v rating vs temperature s v (normalized) s t ( c) pa ckage specifications dip9 package weight: 69 g or 2.4 oz dimensions are in inches alternate units are [mm]
apex microtechnology corporation 5980 north shannon road tucson, arizona 85741 usa applications hotline: 1 (800) 546-2739 4 this data sheet has been carefully checked and is believed to be reliable, however, no responsibility is assumed for possible i n accuracies or omissions. all speci? ciations are subject to change without notice. ebo1u rev. b january 2001 ? 2001 apex microtechnology corporation EB01 operating considerations power supply requirements supply voltage max current hv1 50v to 500v 20a, continuous, 28a peak hv2 50v to 500v 20a, continuous, 28a peak hv3 50v to 500v 20a, continuous, 28a peak v cc 1 10v to 20v 10ma v cc 2 10v to 20v 10ma v cc 3 10v to 20v 10ma v dd 4.5 to 20v 10ma hv1, hv2, and hv3 may be used independently, or may be one supply. also v cc 1, v cc 2, and v cc 3 may be used independently or tied together. the v dd supply must be compatible with the input logic. if a high voltage logic such as cmos is used it may be tied with the v cc supplies. hcmos requires a 5v10% supply special considerations general the EB01 is designed to give the user maximum ? exibility in a digital or dsp based motion control system. thermal, overvoltage, overcurrent, and cross? re protection circuits are part of the user?s design. users should read application note 1, "general operating considerations;? and application note 30, ?pwm basics? for much useful information in applying this part. these application notes are in the ?power integrated circuits data book? and on line at www.apexmicrotech.com. grounding and bypassing as in any high power pwm system, grounding and bypassing are one of the keys to success. the EB01 is capable of generating 20 kw pulses with 100 n-second rise and fall times. if improperly grounded or bypassed this can cause horrible conducted and radiated emi. in order to reduce conducted emi, the EB01 provides a separate power ground, named hvrtn, for each high voltage supply. these grounds are electrically isolated from the logic ground (v ss ) and each other. this isolation eliminates high current ground loops. however, more than 5v offset between the grounds will destroy the EB01. apex recommends back to back high current diodes between logic and power grounds; this will maintain isolation but keep offset at a safe level. all grounds should tie together at one common point in the system. in order to reduce radiated emi, apex recommends a 400 f or larger capacitor between hv and hvrtn. this capacitor should be a a switching power grade electrolytic capacitor with esr rated at 20 khz. this capacitor should be placed physically as close to the EB01 as possible. however, such a capacitor will typically have a few hundred milli-ohms or so esr. therefore, each section must also be bypassed with a low esr 1f or larger ceramic capacitor. in order to minimize radiated noise it is necessary to minimize the area of the loop containing high frequency current. (the size of the antenna.) therefore the 1f ceramic capacitors should bypass each hv to its return right at the pins the EB01. shoot through protection igbts have a relatively short turn on delay, and a long turn off delay. unlike most semiconductor devices the turn off delay cannot be improved very much by drive circuit design. therefore, if the turn on input to an igbt in a half bridge circuit is applied simultaneously with the turn off input to the other igbt in that half bridge, there will be a time when both igbts are simultaneously on. this will short the power rails through the igbts, causing excessive power dissipation and very high emi. to avoid the shoot through condition the turn on of one igbt must be delayed long enough for the other in the same half bridge to have completely turned off. a delay of at least 1.5 -seconds is required for the EB01. this delay must be provided after turning off lin before hin of the same half bridge may be turned on; likewise it must be provided after turning off hin before lin of the same half bridge may be turned on. protection circuits the EB01 does not include protection circuits. however, there is a shut down input which will turn off all igbts when at logic ?1?. this input may be used with user designed temperature sensing and current sensing circuits to shut down the igbts in the event of a detected unsafe condition. this is recommended since the igbts may be turned off this way even if the normal input logic or dsp programming is faulty. start-up requirements in order for an igbt to be turned on, the corresponding logic input signal must make its positive transition after sd has been low for at least 1 -second. the lower rail igbt in the half bridge must be turned on for at least 2 -seconds to charge the bootstrap capacitor before the top rail igbt can be turned on. this must be done no more than 330 -seconds prior to turning on the top rail igbt. however, if the load pulls the output to ground, the positive rail igbt can be turned on without ? rst brie? y turning on the negative rail igbt. an internal ? oating supply is used to enhance the operation of the bootstrap bias circuit. this allows the top rail igbts to be held on inde? nitely once turned on. heatsink the EB01 should be provided with suf? cient heatsink to dissipate 179 watts while holding a case temperature of 25c when operating at 500v, 20a, 30khz and 3 sections simultaneously providing maximum current. the dissipation is composed of conduction losses (i out xv sat ) up to 54 watts per half bridge and switching losses of about 4 watts per half bridge. the conduction losses are proportional to i out ; switching losses are proportional to hv supply voltage and to switching frequency.
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